Toshiba 2SJ201 Y MOS-FET P Channel

Toshiba 2SJ201 Field Effect Transistor Silicon P Channel MOS Type für Audio Anwendungen

Toshiba MOS-FET Type 2SJ201 P Channel for High Power Amplifier Application

Menge: 1 Stück
Bezeichnung: 2SJ201 Y (F)

Technische Daten
- Drain−source voltage VDSS: -200 V
- Drain current ID: -12 A (use devices on condition that the channel temperature is below 150°C)
- Drain power dissipation PD: 150 W
- VGS (OFF) Classification: Y: 1.4~2.8
- Funktion: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 
- Applications: High Power Amplifier Application 
- Complementary to: 2SK1530
- Hersteller: Toshiba

Zustand: neu, Original Herstellerware

Achtung: ESD-empfindliches Bauteil

Auslieferung erfolgt in ESD-sicherer Verpackun